| 1. | Magnetic - field - dependent carrier injection at la2 3 sr1 3 mno3 and organic semiconductors interfaces
半金属材料的临界指数及临界特征 |
| 2. | The separated phase of blends and carrier injection , transport and decay were firstly investigated by monitoring two different transient el peaks
首次引入监测基质和杂质两个瞬态电致峰值来研究低掺杂体系的相分离及载流子注入、迁移和湮灭过程。 |
| 3. | Tddb and hce always take place simultaneously under device operation conditions . hot - carrier enhanced tddb effect of ultra - thin gate oxide is investigated by using substrate hot - carrier injection technique
在通常的工作条件下，氧化层的经时击穿和热载流子效应总是同时存在的。 |
| 4. | Since polymer light - emitting diodes ( pleds ) were invented , much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application . we investigated several factors influencing the brightness , efficiency and spectrum characteristics of pleds el , especially focused our attention on the processes of carrier injection , transport , recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds
本文以提高聚合物器件的效率和亮度为目标，提出了提高及b几种方案，研究了材料性质，器件结构，它们的稳态及瞬态特性及发光机理，特别关注了以兼具电子空穴传输能力的分子及掺杂聚合物作成的单双层掺杂聚合物发光器件中的载流子注入、迁移、复合及湮灭等。 |
| 5. | The emphasis is about the metal line reliability , contact reliability , gate oxide integrity , and hot carrier injection in test . based on the test datum , the reliability of 1 . 0 m process on single failure mechanisms is evaluated , and all the test structures are explained
测试内容上着重介绍了金属化完整性测试、氧化层完整性测试、连接完整性测试和热载流子注入测试，根据测试数据，对1 . 0 m工艺线单一失效机理的可靠性进行了评价，对不同测试结构的作用进行了说明。 |
| 6. | Account for the high electrical field induced from the high applied voltage relative to small dimension device , the mechanism of hot - carrier generation is analysed , the si - h bond broken model for hot - carrier injection and interface states generation is deduced and the substrate current model is developed
基于mosfet偏压不能按比例缩小所导致的高电场，对mosfet的热载流子产生机理进行了分析，导出了热载流子注入所引起的界面态的si - h健断裂模型，并建立了表征器件热载流子效应的衬底电流模型。 |
| 7. | Carrier aggregation on the interface between organic layer and electrodes may screen extra electric field and reduce barrier height for carrier injection . ( 3 ) we utilized oxd as buffer layer in anode and lif in cathode in single layer mehppv pleds . and the efficiency and brightness was doubled . the results implied that aggregation of minority carriers at the interface may the role of blocking layer
( 3 )在单层mehppv器件的阳极引入oxd作为电子阻挡修饰层， lif作为阴极修饰层，利用阻挡少数载流子实现界面电荷积累的方法提高了器件发光亮度和效率，分析了器件电流电压特性，使器件发光效率和亮度提高了一倍以上。 |
| 8. | We also investigated el characteristic of double - layer pleds , ito / pvk - dcjtb / alq / lif / al , by similar method . this method was successfully used for getting directly information of carrier injection , accumulation , tunnel and annihilation between two layers . the mutual injection between organic layers and recombination zone can be adjusted by changing the concentration of dopants in blends
( 3 )在ito / pvk - dcjtb / alq / lif / al结构的掺杂双层有机电致发光器件中，利用脉冲驱动器件，监测两个瞬态电致发光峰值的方法，研究了不同掺杂浓度下的混合薄膜与alq界面处的载流子积累、相互隧穿注入以及载流子湮灭等过程，并利用掺杂浓度调节了界面处的载流子相互隧穿几率，改变了复合发光区域。 |
